SBYV28-150-E3/51 Vishay Semiconductors, SBYV28-150-E3/51 Datasheet
SBYV28-150-E3/51
Specifications of SBYV28-150-E3/51
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SBYV28-150-E3/51 Summary of contents
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... Operating and storage temperature range Document Number: 88737 For technical questions within your region, please contact one of the following: Revision: 22-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, SBYV28-50 thru SBYV28-200 FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • ...
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... SBYV28-50 thru SBYV28-200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 3.5 A forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction 4 MHz capacitance Note = 300 μs pulse, duty cycle ≤ (1) ...
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... Percent of Rated Peak Reverse Voltage (%) Fig Typical Reverse Leakage Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Document Number: 88737 For technical questions within your region, please contact one of the following: Revision: 22-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, SBYV28-50 thru SBYV28-200 1.4 1.6 1.8 100 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...