TIG065E8-TL-H ON Semiconductor, TIG065E8-TL-H Datasheet - Page 3

• Manufacturer Part Number: TIG065E8-TL-H
• Description: IGBT Transistors HIGH POWER SWITCHING
• Manufacturer: ON Semiconductor

Specifications of TIG065E8-TL-H

• Rohs: yes

10000
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
10
--50
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
10
0
0
0.5
0.5
--25
2
1.0
1.0
Gate-to-Emitter Voltage, V GE -- V
Gate-to-Emitter Voltage, V GE -- V
Collector Current (Pulse), I CP -- A
3
0
Case Temperature, Tc -- ° C
1.5
1.5
SW Time -- I CP
V GE (off) -- Tc
5
V CE -- V GE
V CE -- V GE
25
2.0
2.0
7
2.5
2.5
100
50
Switching test circuit Fig.1
3.0
3.0
75
2
3.5
3.5
100
3
V GE =2.5V
V CC =320V
R G =140Ω
C M =100μF
PW=50μs
4.0
4.0
Tc= --25 ° C
V CE =10V
I C =1mA
Tc=75 ° C
5
125
4.5
4.5
IT16032
IT16026
IT16028
IT16030
7
1000
150
5.0
5.0
TIG065E8
10000
10000
1000
1000
100
100
10
10
10
9
8
7
6
5
4
3
2
1
0
--50
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0
0
0
0.5
20
2
--25
Collector-to-Emitter Voltage, V CE -- V
1.0
Cies, Coes, Cres -- V CE
40
Gate-to-Emitter Voltage, V GE -- V
4
Gate Series Resistance, R G -- Ω
0
Case Temperature, Tc -- ° C
1.5
60
6
SW Time -- R G
V CE (sat) -- Tc
V CE -- V GE
25
2.0
80
8
Cies
100
2.5
50
10
Switching test circuit Fig.1
120
3.0
12
75
140
3.5
14
100
160
4.0
V GE =2.5V
V CC =320V
I CP =150A
C M =100μF
PW=50μs
16
No. A1862-3/8
Tc=25 ° C
f=1MHz
125
180
4.5
18
IT16027
IT16033
IT16029
IT16031
150
200
5.0
20