NGTB15N120LWG ON Semiconductor, NGTB15N120LWG Datasheet - Page 6

• Manufacturer Part Number: NGTB15N120LWG
• Description: IGBT Transistors 1200V/15A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB15N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 156 W
• Package / Case: TO-247
• Mounting Style: Through Hole

0.001
0.001
0.01
0.01
0.1
0.1
10
1
1
0.000001
0.000001
1%
20%
10%
20%
10%
5%
2%
5%
2%
1%
50% Duty Cycle
50% Duty Cycle
Single Pulse
Single Pulse
0.00001
0.00001
0.0001
0.0001
Figure 20. Test Circuit for Switching Characteristics
Figure 19. Diode Transient Thermal Impedance
Figure 18. IGBT Transient Thermal Impedance
0.001
TYPICAL CHARACTERISTICS
0.001
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C
C
Junction
Junction
i
i
PULSE TIME (sec)
PULSE TIME (sec)
= t
= t
0.01
0.01
i
i
/R
/R
i
i
6
R
C
R
C
1
1
1
1
R
C
R
C
0.1
0.1
2
2
2
2
Duty Factor = t
Peak T
Duty Factor = t
Peak T
J
= P
1
J
1
= P
DM
R
R
qJC
DM
1
qJC
x Z
/t
2
1
= 0.80
x Z
/t
R
C
qJC
R
C
= 1.5
2
n
n
n
n
qJC
+ T
10
10
Case
Case
+ T
C
C
R
0.03570
0.08061
0.140
0.190
0.237
0.114
R
0.19655
0.414
0.5
0.345
0.0934
i
i
(°C/W)
(°C/W)
100
100
1.0E−4
1.76E−4
0.002
0.03
0.1
2.0
1.48E−4
0.002
0.03
0.1
2.0
t
i
t
i
(sec)
(sec)
1000
1000