NGTB15N60EG ON Semiconductor, NGTB15N60EG Datasheet - Page 4

• Manufacturer Part Number: NGTB15N60EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

3.5
2.5
1.5
0.5
60
50
40
30
20
10
60
50
40
30
20
10
0
0
3
2
1
0
−60 −40 −20
0
0
T
T
J
J
= −40°C
= 25°C
V
Figure 1. IGBT Output Characteristics
V
Figure 3. IGBT Output Characteristics
1
1
I
CE
CE
C
= 10 A
T
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
V
J
, JUNCTION TEMPERATURE (°C)
GE
V
2
2
GE
Figure 5. V
0
= 17 V to 13 V
= 17 V to 13 V
I
20
C
3
3
= 30 A
40
CE(sat)
4
4
60
vs. T
5
5
80 100 120 140 160
I
C
TYPICAL CHARACTERISTICS
= 15 A
J
I
C
6
6
11 V
9 V
7 V
= 5 A
11 V
9 V
7 V
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7
7
8
8
4
10000
1000
100
60
50
40
30
20
10
60
50
40
30
20
10
10
0
0
0
0
0
T
V
f = 1 MHz
V
J
Figure 4. Typical Transfer Characteristics
GE
10
CE
1
= 150°C
V
Figure 2. IGBT Output Characteristics
V
CE
CE
= 0 V,
= 20 V
V
, COLLECTOR−EMITTER VOLTAGE (V)
20
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
GE
2
4
C
, GATE−EMITTER VOLTAGE (V)
res
30
V
GE
3
= 17 V to 15 V
40
4
50
8
C
C
25°C
oes
ies
5
T
60
J
= −40°C
6
70
12
13 V
11 V
9 V
7 V
7
80
150°C
90
8
100
16
9