NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
NGTB15N60S1EG
Manufacturer Part Number
NGTB15N60S1EG
Description
IGBT Transistors 15A 600V IGBT
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N60S1EG.pdf
(10 pages)
Specifications of NGTB15N60S1EG
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
47 W
Package / Case
TO-220
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NGTB15N60S1EG
Manufacturer:
ON Semiconductor
Quantity:
50
NGTB15N60S1EG
Figure 22. Definition of Turn On Waveform
http://onsemi.com
8