BYV29B-500 /T3 NXP Semiconductors, BYV29B-500 /T3 Datasheet - Page 5

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BYV29B-500 /T3

Manufacturer Part Number
BYV29B-500 /T3
Description
Rectifiers TAPE13 PWRDIODE
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV29B-500 /T3

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
500 V
Forward Voltage Drop
1.4 V at 20 A
Recovery Time
60 ns
Forward Continuous Current
9 A
Max Surge Current
110 A
Reverse Current Ir
50 uA
Mounting Style
SMD/SMT
Package / Case
D2-PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
800
Part # Aliases
BYV29B-500,118
NXP Semiconductors
6. Characteristics
Table 6.
BYV29B-500
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
Fig 4.
F
FRM
r
(A)
I
F
30
20
10
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery current I
forward recovery voltage
0.5
(1)
1
(2)
(3)
1.5
All information provided in this document is subject to legal disclaimers.
V
003aaj589
F
Conditions
I
I
I
V
V
I
T
I
T
T
I
see
(V)
F
F
F
F
F
F
F
j
j
j
R
R
= 8 A; T
= 8 A; T
= 20 A; T
= 2 A; V
= 1 A; V
= 10 A; V
= 10 A; dI
= 25 °C; see
= 25 °C; see
= 100 °C; see
= 500 V; T
= 500 V; T
Figure 9
2
Rev. 2 — 3 April 2012
j
j
R
R
= 150 °C; see
= 25 °C; see
j
R
F
= 30 V; dI
= 30 V; dI
= 25 °C; see
/dt = 10 A/s; T
= 30 V; dI
j
j
= 25 °C
= 100 °C
Figure
Figure
Figure
Fig 5.
(nC)
F
F
Q
5; see
7; see
/dt = 20 A/s;
/dt = 100 A/s;
F
10
10
r
8; see
/dt = 50 A/s;
Figure 4
10
1
3
2
Figure 4
Figure 4
change of forward current; maximum values
Recovered charge as a function of rate of
1
j
= 25 °C;
Figure 6
Figure 6
Figure 6
Min
-
-
-
-
-
-
-
-
-
10
(2)
(1)
BYV29B-500
dI
Ultrafast power diode
Typ
0.9
1.05
1.2
2
0.1
40
50
4
2.5
F
/dt (A/μs)
© NXP B.V. 2012. All rights reserved.
003aaj590
Max
1.03
1.25
1.4
50
0.35
60
60
5.5
-
10
2
Unit
V
V
V
µA
mA
nC
ns
A
V
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