PSMN016-100BS,118 NXP Semiconductors, PSMN016-100BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN016-100BS,118
• Description: MOSFET N-CH 100V 16 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 57 A
• Resistance Drain-source Rds (on): 28.8 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN016-100BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
minimum footprint; mounted on a printed-circuit board to ambient
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
10
-5
10
-4
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
10
-3
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Conditions
see
10
-2
Figure 4
10
-1
PSMN016-100BS
[1]
Min
-
-
P
1
t
Typ
0.56
50
p
T
© NXP B.V. 2012. All rights reserved.
t
p
003aag772
(s)
δ =
Max
1.01
-
T
t
p
t
10
Unit
K/W
K/W
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