CMNDM8001 Central Semiconductor, CMNDM8001 Datasheet

CMNDM8001

Manufacturer Part Number

CMNDM8001

Description

MOSFET SMD- Small Signal P-Channel Mosfet

Manufacturer

Central Semiconductor

Datasheet

1.CMNDM8001.pdf (2 pages)

Specifications of CMNDM8001

Rohs

yes

Transistor Polarity

P-Channel

Continuous Drain Current

200 mA

Resistance Drain-source Rds (on)

1.9 Ohms

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-953

Forward Transconductance Gfs (max / Min)

100 mS

Minimum Operating Temperature

- 65 C

Power Dissipation

250 mW

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MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current

Power Dissipation

Operating and Storage Junction Temperature

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF , I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

Q g(tot)

Q gs

Q gd

g FS

C rss

C iss

C oss

t on

t off

• Device is Halogen Free by design

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

ENHANCEMENT-MODE

SURFACE MOUNT

SILICON MOSFET

SOT-953 CASE

CMNDM8001

P-CHANNEL

TEST CONDITIONS

V GS =10V, V DS =0

V DS =20V, V GS =0

V GS =0, I D =100μA

V DS =V GS , I D =250μA

V GS =4.0V, I D =10mA

V GS =2.5V, I D =10mA

V GS =1.5V, I D =1.0mA

V DS =10V, V GS =4.5V, I D =100mA

V DS =10V, I D =100mA

V DS =3.0V, V GS =0, f=1.0MHz

V DD =3.0V, V GS =2.5V, I D =10mA

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMNDM8001 is

a P-Channel Enhancement-mode Silicon MOSFET,

manufactured by the P-Channel DMOS Process,

designed for high speed pulsed amplifier and driver

applications. This MOSFET offers Low r DS(ON) and

Low Threshold Voltage.

MARKING CODE: BC

FEATURES:

• Low 0.5mm Package Profile

• Low r DS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953

Surface Mount Package

SYMBOL

MIN

100

0.6

T J , T stg

V DS

V GS

P D

I D

0.658

0.158

0.181

TYP

1.9

2.4

-65 to +150

100

200

250

MAX

1.0

1.1

8.0

w w w. c e n t r a l s e m i . c o m

R3 (22-August 2011)

UNITS

μA

°C

Related parts for CMNDM8001

CMNDM8001 Summary of contents

Page 1

... V DD =3.0V =2.5V =10mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low r DS(ON) and Low Threshold Voltage ...

Page 2

... CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-953 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Drain 4) Source 5) Gate MARKING CODE (22-August 2011) ...

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