DMP1245UFCL-7 Diodes Inc. / Zetex, DMP1245UFCL-7 Datasheet - Page 3

• Manufacturer Part Number: DMP1245UFCL-7
• Description: MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMP1245UFCL-7

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 6.6 A
• Resistance Drain-source Rds (on): 25 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X1-DFN1616-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 613 mW

Electrical Characteristics
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
0.001
0.01
0.1
Characteristic
0.00001
1
J
0.0001
= 25°C
@T
A
= 25°C unless otherwise specified
0.001
t1, PULSE DURATION TIMES (sec)
Fig. 03 Transient Thermal Resistance
0.01
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
R
oss
t
t
SD
rss
DSS
iss
fs
gs
gd
r
f
g
g
|
3 of 7
0.1
Min
-0.3
-12
0.4
⎯
⎯
⎯
⎯
⎯
⎯
-
-
-
-
-
-
-
-
-
-
-
-
-
1357.4
217.64
273.6
14.26
20.48
33.11
219.4
16.1
26.1
1.71
15.2
Typ
-0.6
499
25
31
40
60
⎯
⎯
⎯
3
-
1
-0.95
Max
±10
100
-1.0
⎯
29
45
60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
10
Diodes Incorporated
Unit
mΩ
nC
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
Ω
A Product Line of
R
R
Duty Cycle, D=t1/ t2
θ
θJA
JA
(t)=r(t) * R
= 205°C/W
100
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
I
D
GS
DS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DS
GS
GS
GS
= -180mA, R
DMP1245UFCL
= -12.0V, V
= V
= -5V, I
= -10V, V
= 0V, V
= 0V, I
= ±8.0V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5 V, I
= 0V, I
= -4.5V
= -8V
= -2.5V, V
θ
JA
Test Condition
GS
1000
, I
D
D
D
GS
D
© Diodes Incorporated
= -250µA
= -2A
November 2011
= -2A
D
D
D
GS
= -250µA
D
DS
DS
= 0V, f = 1MHz
G
= - 4A
= - 3.5A
= - 1A
GS
I
V
= - 0.5A
D
= 0V
= 2.0Ω,
DS
= -10V
= 0V
= -1A,
= 0V
= -10V