BZT52H-C3V9 T/R NXP Semiconductors, BZT52H-C3V9 T/R Datasheet - Page 7

• Manufacturer Part Number: BZT52H-C3V9 T/R
• Description: Zener Diodes DIODE ZENER 5 PCT TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BZT52H-C3V9 T/R

• Product Category: Zener Diodes
• Rohs: yes
• Zener Voltage: 3.9 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 1.75 mV/k
• Power Dissipation: 830 mW
• Maximum Reverse Leakage Current: 3 uA
• Maximum Zener Impedance: 95 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-123F
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BZT52H-C3V9,115

NXP Semiconductors
BZT52H_SER
Product data sheet
Fig 1.
Fig 3.
(mV/K)
P
S
(W)
ZSM
(1) T
(2) T
Z
10
10
10
−1
−2
−3
0
1
10
3
2
as a function of pulse duration; maximum
values
BZT52H-B/C2V4 to BZT52H-B/C4V3
T
working current; typical values
Non-repetitive peak reverse power dissipation
0
Temperature coefficient as a function of
−1
j
j
j
= 25 °C (prior to surge)
= 150 °C (prior to surge)
= 25 °C to 150 °C
20
1
(1)
(2)
4V3
40
t
p
3V9
2V4
2V7
(ms)
3V3
I
3V6
Z
All information provided in this document is subject to legal disclaimers.
(mA)
mbg801
mbg783
3V0
Rev. 3 — 7 December 2010
10
60
Fig 2.
Fig 4.
(mV/K)
(mA)
S
I
F
Z
300
200
100
10
−5
0
5
0
0.6
T
Forward current as a function of forward
voltage; typical values
0
BZT52H-B/C4V7 to BZT52H-B/C12
T
Temperature coefficient as a function of
working current; typical values
Single Zener diodes in a SOD123F package
j
j
= 25 °C
= 25 °C to 150 °C
4
8
BZT52H series
9V1
8V2
7V5
6V8
0.8
12
11
10
12
6V2
5V6
5V1
4V7
© NXP B.V. 2010. All rights reserved.
16
I
V
Z
mbg781
mbg782
F
(mA)
(V)
20
1
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