BZB784-C12 T/R NXP Semiconductors, BZB784-C12 T/R Datasheet - Page 4

• Manufacturer Part Number: BZB784-C12 T/R
• Description: Zener Diodes DIODE ZENER 5 PCT TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BZB784-C12 T/R

• Product Category: Zener Diodes
• Rohs: yes
• Zener Voltage: 12.05 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: 7.9 mV/k
• Power Dissipation: 350 mW
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 25 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Configuration: Dual Common Anode
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BZB784-C12,115

Table 1 Per type BZB784-C2V4 to C15
T
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
j
BZB784-C
= 25 °C; unless otherwise specified.
XXX
MIN.
10.4
12.4
13.8
11.4
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
at I
WORKING
VOLTAGE
Tol. ≈5%
V
Z
Z
= 5 mA
(V)
MAX.
10.6
11.6
12.7
14.1
15.6
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
at I
DIFFERENTIAL RESISTANCE
Z
= 1 mA
MAX.
600
600
600
600
600
600
600
500
480
400
150
100
150
150
150
170
200
80
80
80
r
dif
(Ω)
TYP.
70
75
80
85
85
85
80
50
40
15
10
10
10
10
at I
6
6
6
6
6
8
Z
= 5 mA
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
(see Figs 3 and 4)
at I
COEFFICIENT
S
Ztest
Z
TEMP.
TYP.
10.7
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
(mV/K)
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
= 5 mA
DIODE CAP.
at f = 1 MHz;
V
C
R
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
d
90
90
85
80
75
= 0 V
(pF)
NON-REPETITIVE PEAK
I
REVERSE CURRENT
ZSM
(A) at t
T
amb
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
= 25 °C
p
= 100 μs;