ZXMP4A57E6TA Diodes Inc. / Zetex, ZXMP4A57E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMP4A57E6TA
• Description: MOSFET MOSFET BVDSS 31V-40 SOT26,3K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP4A57E6TA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.7 A
• Resistance Drain-source Rds (on): 80 mOhms at -10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-26
• Fall Time: 21 ns
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 47 ns

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
Notes:
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
5. Same as note (4), except the device is measured at t ≤ 5 sec.
6. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
GS
GS
A
= 25°C unless otherwise specified
= 10V
= 10V
@T
A
= 25°C unless otherwise specified
(Note 5)
T
(Note 4)
(Note 6)
(Note 5)
(Note 6)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
A
= 70°C (Note 5)
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Symbol
Symbol
T
J
V
R
V
, T
I
I
P
DSS
I
DM
SM
I
θ JA
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
13.7
-3.7
-2.9
-2.9
-2.6
±20
113
-40
-18
-18
1.1
8.8
1.7
73
ZXMP4A57E6
© Diodes Incorporated
mW/°C
°C/W
Unit
Unit
°C
W
V
V
A
A
A
A
March 2011