BZX84-C30 /T3 NXP Semiconductors, BZX84-C30 /T3 Datasheet - Page 7
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BZX84-C30 /T3
Manufacturer Part Number
BZX84-C30 /T3
Description
Zener Diodes DIODE ZENER 5 PCT TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BZX84-B18_T3.pdf
(16 pages)
Specifications of BZX84-C30 /T3
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
30 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
26.6 mV/k
Power Dissipation
250 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-236AB
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BZX84-C30,235
NXP Semiconductors
Table 8.
T
[1]
[2]
Table 9.
T
BZX84_SER
Product data sheet
BZX84-
xxx
24
BZX84-
xxx
27
30
33
36
39
43
47
51
j
j
= 25
= 25
f = 1 MHz; V
t
p
= 100 s; square wave; T
C unless otherwise specified.
C unless otherwise specified.
Sel Working
A
B
C
Sel Working
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
B
C
A
B
C
Characteristics per type; BZX84-A2V4 to BZX84-C24
Characteristics per type; BZX84-A27 to BZX84-C75
voltage
V
I
Min
23.76 24.24 60
23.5
22.8
voltage
V
I
Min
26.73 27.27 65
26.5
25.1
29.7
29.4
28.0
32.67 33.33 75
32.3
31.0
35.64 36.36 80
35.3
34.0
38.61 39.39 80
38.2
37.0
42.57 43.43 85
42.1
40.0
46.1
44.0
50.49 51.51 90
50.0
48.0
Z
Z
R
Z
Z
= 5 mA
= 2 mA
= 0 V
(V)
(V)
Max
24.5
25.6
Max
27.5
28.9
30.30 70
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
47.9
50.0
52.0
54.0
j
Differential resistance
r
I
Typ
Differential resistance
r
I
Typ
85
= 25 C before surge
Z
Z
dif
dif
= 1 mA
= 0.5 mA I
()
()
Max
250
Max
300
300
325
350
350
375
375
400
All information provided in this document is subject to legal disclaimers.
I
Typ
25
Typ
25
30
35
35
40
45
50
60
Z
Z
= 5 mA
= 2 mA
Max
70
Max
80
80
80
90
130
150
170
180
Rev. 4 — 22 March 2013
Reverse
current
I
Max V
0.05 16.8
Reverse
current
I
Max V
0.05 18.9
0.05 21
0.05 23.1
0.05 25.2
0.05 27.3
0.05 30.1
0.05 32.9
0.05 35.7
R
R
(A)
(A)
R
R
(V) Min
(V) Min
…continued
Temperature
coefficient
S
I
18.4
Temperature
coefficient
S
I
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
Z
Z
Z
Z
= 5 mA
= 2 mA
(mV/K)
(mV/K)
Typ
20.4
Typ
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
Max
22.0
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
BZX84 series
Diode
capacitance
C
Max
55
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
Voltage regulator doides
d
d
(pF)
(pF)
[1]
[1]
© NXP B.V. 2013. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
1.25
Non-repetitive
peak reverse
current
I
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
ZSM
ZSM
(A)
(A)
[2]
[2]
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