DMN2300U-7 Diodes Inc., DMN2300U-7 Datasheet - Page 4

• Manufacturer Part Number: DMN2300U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN2300U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.43 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
2.0
1.5
1.0
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50 -25
0
0
Fig. 8 On-Resistance Variation with Temperature
V
V , DRAIN-SOURCE VOLTAGE (V)
GS
I , DRAIN-SOURCE CURRENT (A)
vs. Drain Current and Gate Voltage
V
D
DS
Fig. 4 Typical Output Characteristic
V
T , AMBIENT TEMPERATURE (°C)
GS
0.4
= 1.8V
V
1
GS
Fig. 6 Typical On-Resistance
A
GS
= 2.0V
= 2.5V
= 4.5V
0
25
0.8
2
50
V
V
1.2
V
V
3
GS
GS
GS
GS
V
75
I = 1.0A
GS
D
= 2.5V
= 4.5V
= 1.5V
= 1.2V
= 4.5V
100
1.6
4
I = 500mA
V
D
GS
125 150
= 2.5V
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0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
2.0
1.5
1.0
0.5
0
0
-50 -25
0
0
0
Fig. 9 On-Resistance Variation with Temperature
0.25
V
V
DS
GS
T , AMBIENT TEMPERATURE (°C)
0.5
T = 125°C
V
Fig. 5 Typical Transfer Characteristic
vs. Drain Current and Temperature
Diodes Incorporated
= 5V
A
A
= 4.5V
GS
T = 150°C
A
Fig. 7 Typical On-Resistance
0.5
, GATE-SOURCE VOLTAGE (V)
0
A Product Line of
I , DRAIN CURRENT (A)
D
1
0.75
25
V
I = 500mA
D
GS
T = -55°C
A
V
= 2.5V
50
1.5
I = 1.0A
1
GS
D
T = 125°C
T = 25°C
A
A
= 4.5V
T = 85°C
1.25
A
75
2
100
1.5 1.75
DMN2300U
T = 150°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
2.5
© Diodes Incorporated
125 150
July 2011
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