DMP21D5UFD-7 Diodes Inc., DMP21D5UFD-7 Datasheet - Page 3

• Manufacturer Part Number: DMP21D5UFD-7
• Description: MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA
• Manufacturer: Diodes Inc.

Specifications of DMP21D5UFD-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 600 mA
• Resistance Drain-source Rds (on): 3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X1-DFN1212-3
• Fall Time: 19.2 ns
• Gate Charge Qg: 0.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.4 W
• Rise Time: 4.3 ns
• Typical Turn-off Delay Time: 20.2 ns

DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.6
0.4
0.2
1.0
0.8
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0
0
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
V
GS
-V , DRAIN -SOURCE VOLTAGE (V)
-25
Fig. 1 Typical Output Characteristics
V
V
= -1.8V
DS
T , JUNCTION TEMPERATURE ( C)
GS
GS
0.2
-I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
J
Drain Current and Gate Voltage
1
D
= 2.5V
= 4.5V
-
-
0
25
0.4
2
50
0.6
3
75
100
0.8
4
°
125
1.0
150
5
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1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
0
0
0
0
-25
V
DS
Fig. 6 On-Resistance vs.Temperature
T , JUNCTION TEMPERATURE ( C)
0.5
Fig. 2 Typical Transfer Characteristics
-I , DRAIN SOURCE CURRENT (A)
-V
J
= -5V
0.2
D
Fig. 4 Typical On-Resistance vs.
GS
Drain Current and Temperature
0
, GATE SOURCE VOLTAGE(V)
1.0
25
0.4
T = -55 C
T =
A
50
1.5
A
T =
A
25 C
°
°
85 C
0.6
75
°
2.0
T = 150°C
DMP21D5UFD
T =
A
A
T =
T = 2
T =
A
A
100
A
125°C
85°C
-55°C
5°C
0.8
°
T =
2.5
125
T =
A
A
© Diodes Incorporated
125 C
150 C
°
August 2012
150
°
3.0
1