PSMN5R0-80BS,118 NXP Semiconductors, PSMN5R0-80BS,118 Datasheet - Page 10
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PSMN5R0-80BS,118
Manufacturer Part Number
PSMN5R0-80BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN5R0-80BS118.pdf
(15 pages)
Specifications of PSMN5R0-80BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
5.1 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
270 W
Factory Pack Quantity
800
NXP Semiconductors
PSMN5R0-80BS
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
100
(A)
I
80
60
40
20
S
0
0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 1 — 20 March 2012
0.4
175 °C
N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK
0.6
0.8
T
j
= 25 °C
003aad084
1
V
SD
(V)
1.2
PSMN5R0-80BS
© NXP B.V. 2012. All rights reserved.
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