BZX884-C13 T/R NXP Semiconductors, BZX884-C13 T/R Datasheet - Page 5
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BZX884-C13 T/R
Manufacturer Part Number
BZX884-C13 T/R
Description
Zener Diodes DIODE ZENER 5 PCT TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BZX884-C16_TR.pdf
(10 pages)
Specifications of BZX884-C13 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
13 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
8.8 mV/k
Power Dissipation
250 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
10 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOD-882
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BZX884-C13,315
Table 1 Per type BZX884-B/C2V4 to B/C24
T
BZX884-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
B or C
= 25 °C unless otherwise specified.
XXX
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
Tol. ±2% (B)
MIN.
WORKING VOLTAGE
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
18.32
18.36
20.40
22.44
24.48
MAX.
at I
V
Z
Z
= 5 mA
(V)
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
Tol. ±5% (C)
MIN.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
MAX.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
50
50
60
60
60
at I
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 1 mA
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MAX.
r
dif
(Ω)
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
10
10
15
20
25
at I
TYP.
Ztest
= 5 mA
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
MAX.
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
10.7
12.4
14.4
16.4
18.4
20.4
(see Figs 3 and 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 5 mA
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
80
70
60
55
at f = 1 MHz;
DIODE CAP.
V
C
R
MAX.
d
= 0 V
(pF)
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE PEAK
I
REVERSE CURRENT
ZSM
(A) at t
T
amb
MAX.
= 25 °C
p
= 100 μs;