DMG9N65CT Diodes Inc., DMG9N65CT Datasheet - Page 5

• Manufacturer Part Number: DMG9N65CT
• Description: MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
• Manufacturer: Diodes Inc.

Specifications of DMG9N65CT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 1.3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 28 ns
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.15 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 122 ns

Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
DMG9N65CT
Document number: DS35619 Rev. 6 - 2
D
Q
b2
D1
e1
E
e
L1
*Guaranteed by TO-220AB leadframe design
b
P
H1
c
A
A2
A1
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5 of 6
Dim Min
All Dimensions in mm
A1
A2
b2
D1
H1
L1
e1
A
D
Q
b
c
e
E
L
P
0.356
14.22
12.70
3.56
0.51
2.04
0.39 0.81 1.01
1.15 1.24 1.77
8.39
9.66
5.85
3.54
2.54
TO220AB
-
2.54
5.08
Typ
-
-
-
-
-
-
-
-
-
-
-
-
16.51
10.66
14.73
Max
4.82
1.39
2.92
0.61
9.01
6.85
6.35
4.08
3.42
DMG9N65CT
© Diodes Incorporated
February 2013