MCH3377-S-TL-E ON Semiconductor, MCH3377-S-TL-E Datasheet - Page 4
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MCH3377-S-TL-E
Manufacturer Part Number
MCH3377-S-TL-E
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet
1.MCH3377-S-TL-E.pdf
(7 pages)
Specifications of MCH3377-S-TL-E
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 3 A
Resistance Drain-source Rds (on)
83 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-3
Power Dissipation
1 W
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
V DS = --10V
I D = --3A
20
1
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
60
V GS -- Qg
P D -- Ta
2
80
3
100
120
4
140
IT13018
IT13016
160
MCH3377
5
--0.01
--1.0
--0.1
--10
--0.01
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2 3
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this area
is limited by R DS (on).
--0.1
2 3
A S O
5 7
--1.0
2
✕0.8mm)
2 3
5
No.A0957-4/7
PW≤10μs
7
--10
IT13017
2
3