CPH6341-M-TL-E ON Semiconductor, CPH6341-M-TL-E Datasheet - Page 4

• Manufacturer Part Number: CPH6341-M-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of CPH6341-M-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 5 A
• Resistance Drain-source Rds (on): 59 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SC-74
• Power Dissipation: 1.6 W

--10
2.0
1.6
1.5
1.0
0.5
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0
0
V DS = --15V
I D = --5A
1
20
2
Ambient Temperature, Ta -- ° C
40
Total Gate Charge, Qg -- nC
3
When mounted on ceramic substrate
(900mm
60
V GS -- Qg
P D -- Ta
4
80
5
2
✕0.8mm)
6
100
7
120
8
140
IT13387
IT13389
9
160
10
CPH6341
--0.01
--1.0
--0.1
--10
--0.01
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25 °C
Single pulse
When mounted on ceramic substrate
(900mm
I DP = --20A
I D = --5A
2 3
Operation in this
area is limited by R DS (on).
2
✕0.8mm)
5 7
Drain-to-Source Voltage, V DS -- V
--0.1
2 3
A S O
5 7
--1.0
2 3
5
7
--10
PW ≤10μs
No. A1084-4/7
2 3
IT13388
5
7