ECH8659-M-TL-H ON Semiconductor, ECH8659-M-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8659-M-TL-H
• Description: MOSFET
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ECH8659-TL-H
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD =15V
D
S
I D =3.5A
R L =4.3Ω
ECH8659
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V OUT
Symbol
Package
ECH8
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3.5A
I D =3.5A, V GS =10V
I D =2A, V GS =4.5V
I D =2A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
V DS =15V, V GS =10V, I D =3.5A
I S =7A, V GS =0V
ECH8659
Conditions
3,000pcs./reel
Shipping
min
Pb Free and Halogen Free
1.2
2.2
30
Ratings
typ
memo
11.8
0.79
710
120
3.7
2.4
2.0
18
29
39
72
10
25
43
25
max
±10
2.6
1.2
24
41
55
No. A1224-2/7
1
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V