ALD212900APAL Advanced Linear Devices, ALD212900APAL Datasheet
ALD212900APAL
Specifications of ALD212900APAL
Related parts for ALD212900APAL
ALD212900APAL Summary of contents
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... Operating Temperature Range* 0°C to +70°C 8-Pin SOIC 8-Pin Plastic Dip Package Package ALD212900ASAL ALD212900APAL ALD212900SAL ALD212900PAL * Contact factory for industrial temp. range or user-specified threshold voltage values. ©2013 Advanced Linear Devices, Inc., Vers. 1.0 ® MOSFET array is preci- ® ...
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... Advanced Linear Devices 10.6V 10. 500 mW 0°C to +70°C -65°C to +150°C +260°C Typ Max Unit Test Conditions 0. =20µ 0. GS(th)1 -V GS(th)2 5 µV/°C V DS1 = V DS2 -1.7 mV/° 20µ ...
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... V to turn on. Precision DS(ON) GS trolled resistor. For higher values of V the saturation current I IDS(ON) and DS(ON) Advanced Linear Devices ® is set at a negative voltage level (V GS(th) >V-) at which the EPAD MOSFET turns off. Without 0.00V = Ground, the EPAD EPAD MOSFET may be DS(ON) . These Depletion Mode EPAD ...
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... V- and V+. This way internally back biased diodes are never allowed to become forward biased, possi- bly causing damage to the device. Standard ESD control procedures should be observed so that static charge does not degrade the performance of the devices. Advanced Linear Devices causes the subthreshold I-V curves GS . GS(th 10µ ...
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... V GS= V GS(th) +3.0V V GS= V GS(th) +2.5V V GS= V GS(th) +2.0V V GS= V GS(th) +1.5V V GS= V GS(th) +1.0V V GS= V GS(th) +0. 1000000.00 100000.00 V GS(th) = 0.0V V GS(th) = +0.2V V GS(th) = +0.4V V GS(th) = +0.8V V GS(th) = +1. 1000000.00 100000.00 +0.1 +0.2 +0.3 +0.4 +0.5 Advanced Linear Devices LOW VOLTAGE OUTPUT CHARACTERISTICS -10 -20 -30 -40 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 DRAIN SOURCE ON VOLTAGE - V DS(ON) (V) FORWARD TRANSFER CHARACTERISTICS EXPANDED (SUBTHRESHOLD 25°C 10000 ...
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... AMBIENT TEMPERATURE - T A (°C) ALD212900/ALD212900A GS(th 3.0V +125 +50 +75 +100 0 +1.0 +2.0 +3 GS(th 3.0V +50 +75 +100 +125 Advanced Linear Devices HIGH LEVEL OUTPUT CONDUCTANCE vs. GATE THRESHOLD VOLTAGE 2. 25°C 2.50 2.25 2. GS(th 3.0V 1.75 1.50 -4.0 -3.0 -2.0 -1.0 0.0 +1.0 GATE THRESHOLD VOLTAGE - V GS(th) (V) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 3 ...
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... GS(th -55°C +125°C +70°C 0° +25°C 0°C - 55° Advanced Linear Devices ZERO TEMPERATURE COEFFICIENT (ZTC) 1000 0.1V 800 600 +125°C 400 +25°C Zero Temperature Coefficient (ZTC) 200 - 55° +0.1 +0.2 +0.3 GATE SOURCE OVERDRIVE VOLTAGE ...
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... DRAIN OFF LEAKAGE CURRENT I DS(OFF) vs. AMBIENT TEMPERATURE 600 500 400 300 200 100 0 -50 0 +25 -25 AMBIENT TEMPERATURE - T A (°C) ALD212900/ALD212900A I DS(OFF) +50 +75 +100 +125 Advanced Linear Devices OFFSET VOLTAGE vs. AMBIENT TEMPERATURE +10 +8 REPRESENTATIVE UNITS GS(th GS(th -10 -50 -25 0 +25 ...
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... V 1/2 ALD1105, DS 1/2 ALD1107, or 1/2 ALD3107xx Package OUT - M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or 1/2 ALD3107xx Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL + SET SET ON I SOURCE M 1 OFF M1: M3, M4: 1/2 ALD1101, ALD1102, 1/2 ALD1116, ALD1117, 1/2 ALD1109xx, 1/2 ALD1103, ...
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... ALD1105, 1/2 ALD1106, 1/2 ALD1108xx, or 1/2 ALD2108xx CASCODE CURRENT SOURCES + SET SET M3, M4: ALD1101, ALD1116, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1106, or 1/2 ALD2108xx Advanced Linear Devices P- CHANNEL CURRENT SOURCE + SET SET SOURCE M3, M4: ALD1102, ALD1117, 1/2 ALD1103, 1/2 ALD1105, 1/2 ALD1107, or ...
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... S (45° (45° ALD212900/ALD212900A SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 0.937 ...
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... ALD212900/ALD212900A PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package Dim D S-8 ø Advanced Linear Devices Millimeters Min Max Min 3.81 5.08 0.105 0.38 1.27 0.015 2.03 0.050 1.27 0.89 1.65 0.035 0.38 0.51 0.015 0.20 0.30 0.008 9.40 11.68 0.370 7.11 0.220 5.59 7.62 8.26 0.300 2.29 2.79 0.090 7 ...