AT25DF021-MH-T Atmel, AT25DF021-MH-T Datasheet - Page 33

IC FLASH 2MBIT 70MHZ 8UDFN

AT25DF021-MH-T

Manufacturer Part Number
AT25DF021-MH-T
Description
IC FLASH 2MBIT 70MHZ 8UDFN
Manufacturer
Atmel
Datasheet

Specifications of AT25DF021-MH-T

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
2M (256K x 8)
Speed
70MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
14.5
Notes:
14.6
Note:
14.7
3677D–DFLASH–04/09
Symbol
t
t
t
t
t
t
Symbol
t
t
t
t
t
t
Symbol
t
t
V
WPS
WPH
SECP
SECUP
EDPD
RDPD
PP
BP
BLKE
CHPE
OTPP
WRSR
VCSL
PUW
POR
(1)
(1)(3)
(1)(3)
(1)
(1)
(1)
(1)
(1)(2)
(1)
(2)
(1)
AC Characteristics – All Other Parameters (Continued)
1. Not 100% tested (value guaranteed by design and characterization).
2. 15 pF load at frequencies above 66 MHz, 30 pF otherwise.
3. Only applicable as a constraint for the Write Status Register command when SPRL = 1.
Program and Erase Characteristics
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
Power-up Conditions
Parameter
Write Protect Setup Time
Write Protect Hold Time
Sector Protect Time (from Chip Select High)
Sector Unprotect Time (from Chip Select High)
Chip Select High to Deep Power-Down
Chip Select High to Standby Mode
Parameter
Page Program Time (256 Bytes)
Byte Program Time
Block Erase Time
Chip Erase Time
OTP Security Register Program Time
Write Status Register Time
Parameter
Minimum V
Power-up Device Delay Before Program or Erase Allowed
Power-on Reset Voltage
CC
to Chip Select Low Time
4 Kbytes
32 Kbytes
64 Kbytes
Min
100
20
(2.3V Version)
AT25DF021
Max
20
20
30
3
Min
Min
100
20
(2.7V Version)
AT25DF021
Typ
Min
250
450
200
1.0
2.0
1.2
1.5
50
7
Max
20
20
30
3
Max
Max
200
600
950
500
200
5.0
3.5
2.2
10
Units
Units
Units
ns
ns
ns
ns
µs
µs
sec
ms
ms
ms
ms
µs
µs
ns
V
33

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