EMH2407-S-TL-H ON Semiconductor, EMH2407-S-TL-H Datasheet - Page 2

• Manufacturer Part Number: EMH2407-S-TL-H
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of EMH2407-S-TL-H

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6 A
• Resistance Drain-source Rds (on): 25 mOhms
• Mounting Style: SMD/SMT
• Package / Case: EMH-8
• Power Dissipation: 1.3 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
EMH2407-TL-H
P.G
4.5V
0V
D.C.
PW=10μs
V IN
≤
1%
Device
Parameter
V IN
Rg=2kΩ
G
50Ω
Rg
V DD =10V
D
S
I D =3A
R L =3.33Ω
EMH2407
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V OUT
Symbol
Package
EMH8
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =4.5V
I D =3A, V GS =4V
I D =1.5A, V GS =2.5V
V DS =10V, f=1MHz
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =6A
I S =6A, V GS =0V
EMH2407
Conditions
3,000pcs./reel
Shipping
min
Pb Free and Halogen Free
0.5
20
13
14
16
3
Ratings
typ
memo
1020
3000
2250
0.83
0.78
580
310
6.3
1.9
19
20
28
95
75
5
max
±10
1.3
1.2
25
26
39
No. A1141-2/7
1
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V