AT45DB011D-MH-Y Atmel, AT45DB011D-MH-Y Datasheet - Page 9
![IC FLASH 1MBIT 66MHZ 8UDFN](/photos/7/26/72650/8-udfn-8ma1_sml.jpg)
AT45DB011D-MH-Y
Manufacturer Part Number
AT45DB011D-MH-Y
Description
IC FLASH 1MBIT 66MHZ 8UDFN
Manufacturer
Atmel
Datasheet
1.AT45DB011D-SSH-T.pdf
(52 pages)
Specifications of AT45DB011D-MH-Y
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
1M (512 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-UDFN
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
SPI Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
25 mA
Mounting Style
SMD/SMT
Organization
32 KB x 4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 7-1.
7.6
3639H–DFLASH–04/09
PA8/
A16
0
0
0
0
1
1
1
1
•
•
•
Sector Erase
Block Erase Addressing
PA7/
A15
0
0
0
0
1
1
1
1
•
•
•
PA6/
A14
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 4 sectors and only one sector can be erased at one time. To perform sector 0a or sec-
tor 0b erase for the DataFlash standard page size (264 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 5 don’t care bits, 7 page
address bits (PA9 - PA3) and 12 don’t care bits. To perform a sector 1-3 erase, the opcode 7CH
must be loaded into the device, followed by three address bytes comprised of 6 don’t care bits, 2
page address bits (PA8 - PA7) and 16 don’t care bits. To perform sector 0a or sector 0b erase
for the binary page size (256 bytes), an opcode of 7CH must be loaded into the device, followed
by three address bytes comprised of 6 don’t care bits and 7 page address bits (A17 - A11) and
11 don’t care bits. To perform a sector 1-3 erase, the opcode 7CH must be loaded into the
device, followed by three address bytes comprised of 7 don’t care bit and 2 page address bits
(A16 - A15) and 16 don’t care bits. The page address bits are used to specify any valid address
location within the sector which is to be erased. When a low-to-high transition occurs on the CS
pin, the part will erase the selected sector. The erase operation is internally self-timed and
should take place in a maximum time of t
the part is busy.
0
0
0
0
1
1
1
1
•
•
•
PA5/
A13
0
0
0
0
1
1
1
1
•
•
•
PA4/
A12
0
0
1
1
0
0
1
1
•
•
•
PA3/
A11
0
1
0
1
0
1
0
1
•
•
•
SE
. During this time, the status register will indicate that
PA2/
A10
X
X
X
X
X
X
X
X
•
•
•
PA1/
A9
X
X
X
X
X
X
X
X
•
•
•
PA0/
A8
X
X
X
X
X
X
X
X
•
•
•
Block
60
61
62
63
0
1
2
3
•
•
•
9