VS-VSKV105/08 Vishay Semiconductors, VS-VSKV105/08 Datasheet - Page 2

• Manufacturer Part Number: VS-VSKV105/08
• Description: SCR Modules 800 Volt 105 Amp 2094 Amp ITSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKV105/08

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 150 A
• Non Repetitive On-state Current: 2000 A
• Breakover Current Ibo Max: 2094 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• On-state Voltage: 1.73 V
• Holding Current (ih Max): 250 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 95 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

VSKU105.., VSKV105.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.105
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
Maximum continuous RMS on-state current
Maximum peak, one-cycle non-repetitive
on-state current
Maximum I
Maximum I
Maximum value of threshold voltage
Maximum value of on-state
slope resistance
Maximum on-state voltage drop
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
< I < π x I
√t x √t
VOLTAGE
T(TO)
CODE
04
08
12
16
x
x I
AV
[e-mail], [e-mail],
T(AV)
For technical questions within your region, please contact one of the following:
+ r
REVERSE VOLTAGE
t
REPETITIVE PEAK
V
x (I
RRM
T(RMS)
, MAXIMUM
Power Modules Thyristor/Thyristor, 105 A
1200
1600
400
800
V
)
2
SYMBOL
V
I
I
T(TO)
T(RMS)
2
dI/dt
I
I
r
V
T(AV)
TSM
√t
I
t
ADD-A-PAK Generation VII
I
I
2
TM
H
L
(2)
t
(1)
(2)
NON-REPETITIVE PEAK
180° conduction, half sine wave,
T
DC
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
T
I
T
resistive load, gate open circuit
T
TM
TM
REVERSE VOLTAGE
C
C
J
J
J
J
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
V
= 85 °C
= π x I
= π x I
RSM
J
maximum
, MAXIMUM
1300
1700
T(AV)
T(AV)
(3)
(3)
500
900
(4)
(4)
V
, I
TEST CONDITIONS
g
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
= T
= T
= 25 °C
[e-mail]
J
J
DRM
maximum
maximum
RRM
RRM
,
V
r
PEAK OFF-STATE VOLTAGE,
< 0.5 μs, t
DRM
Sinusoidal
half wave,
initial T
T
Initial T
T
GATE OPEN CIRCUIT
J
J
, MAXIMUM REPETITIVE
maximum
maximum
J
J
p
=
=
> 6 μs
1200
1600
400
800
V
Document Number: 94656
VALUES
18.26
14.14
12.91
2000
2094
1682
1760
0.98
1.12
2.34
105
165
200
150
250
400
2.7
1.8
78
20
Revision: 17-May-10
AT 130 °C
I
RRM,
UNITS
mA
kA
15
kA
A/μs
mΩ
mA
°C
I
A
A
V
V
2
DRM
2
√s
s