VS-16RIA100 Vishay Semiconductors, VS-16RIA100 Datasheet - Page 5

• Manufacturer Part Number: VS-16RIA100
• Description: SCRs 1000 Volt 16 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-16RIA100

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 360 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

Document Number: 93695
Revision: 19-Sep-08
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
300
280
260
240
220
200
180
160
140
1
16RIA Series
At Any Rated Load Condition And With
Rated V
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
RRM
5
0
5
0
0
0
RMS Limit
Applied Following Surge.
10
RMS Limit
180°
120°
90°
60°
30°
DC
4
Average On-state Current (A)
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
180°
120°
Average On-state Current (A)
5
90°
60°
30°
Initial T = 125°C
For technical questions, contact: [e-mail]
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10
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
12
Medium Power Thyristors
100
16
16RIA Series
T = 125°C
16RIA Series
T = 125°C
15
Conduction Angle
Conduction Period
(Stud Version), 16 A
J
J
20
20
24
25
28
0
0
Maximum Allowable Ambient Temperature (°C)
Maximum Allowable Ambient Temperature (°C)
25
25
50
50
Fig. 6 - Maximum Non-Repetitive Surge Current
350
325
300
275
250
225
200
175
150
125
0.01
75
75
16RIA Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
100
Versus Pulse Train Duration. Control
Vishay Semiconductors
Pulse Train Duration (s)
125
125
0.1
Rated V
No Voltage Reapplied
16RIA Series
Initial T = 125°C
RRM
Reapplied
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