VS-VSKT26/04 Vishay Semiconductors, VS-VSKT26/04 Datasheet - Page 2
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VS-VSKT26/04
Manufacturer Part Number
VS-VSKT26/04
Description
SCR Modules 400 Volt 27 Amp 420 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKT2616.pdf
(9 pages)
Specifications of VS-VSKT26/04
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
60 A
Non Repetitive On-state Current
400 A
Breakover Current Ibo Max
420 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
On-state Voltage
1.65 V
Holding Current (ih Max)
200 mA
Gate Trigger Voltage (vgt)
2.5 V
Gate Trigger Current (igt)
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
ADD-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
27 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
10
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.26
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
< I < π x I
√t x √t
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
AV
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T(AV)
For technical questions within your region, please contact one of the following:
+ r
REVERSE VOLTAGE
t
REPETITIVE PEAK
x (I
V
RRM
T(RMS)
, MAXIMUM
Thyristor/Diode and Thyristor/Thyristor, 27 A
1000
1200
1400
1600
ADD-A-PAK Generation VII Power Modules
400
600
800
)
V
2
SYMBOL
V
I
I
O(RMS)
T(TO)
2
dI/dt
I
I
I
I
r
V
V
T(AV)
F(AV)
TSM
FSM
√t
or
I
t
I
I
2
TM
FM
H
L
(2)
t
(1)
(2)
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
NON-REPETITIVE PEAK
C
J
J
J
J
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
REVERSE VOLTAGE
= 85 °C
= π x I
= π x I
= π x I
V
RSM
J
maximum
T(AV)
F(AV)
T(AV)
, MAXIMUM
(3)
(3)
(4)
(4)
1100
1300
1500
1700
500
700
900
V
, I
g
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
I
(RMS)
= T
= T
= 25 °C
J
J
DiodesEurope@vishay.com
DRM
or
maximum
maximum
RRM
RRM
,
r
< 0.5 μs, t
V
PEAK OFF-STATE VOLTAGE,
Sinusoidal
half wave,
initial T
Initial T
DRM
GATE OPEN CIRCUIT
, MAXIMUM REPETITIVE
J
J
p
= T
= T
I
(RMS)
> 6 μs
J
J
1000
1200
1400
1600
maximum
maximum
400
600
800
V
Document Number: 94629
VALUES
Revision: 17-May-10
8000
0.86
1.09
9.58
7.31
1.65
400
420
335
350
800
730
560
510
150
200
400
27
60
AT 125 °C
I
RRM,
UNITS
mA
A
15
A/μs
mΩ
A
mA
2
A
V
V
I
2
√s
DRM
s