AT25DF641-S3H-B Atmel, AT25DF641-S3H-B Datasheet - Page 43

IC FLASH 64MBIT 100MHZ 16SOIC

AT25DF641-S3H-B

Manufacturer Part Number
AT25DF641-S3H-B
Description
IC FLASH 64MBIT 100MHZ 16SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT25DF641-S3H-B

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
64M (32K pages x 256 bytes)
Speed
100MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.300", 7.5mm Width)
Architecture
Sectored
Interface Type
SPI Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
19 mA
Mounting Style
SMD/SMT
Organization
64 KB x 128
Memory Configuration
32K Pages X 256 Bytes
Clock Frequency
100MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
Rohs Compliant
Yes
Cell Type
NOR
Density
64Mb
Access Time (max)
5ns
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
19mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT25DF641-S3H-B
Manufacturer:
MAXIM
Quantity:
1 193
Part Number:
AT25DF641-S3H-B
Manufacturer:
ATMEL
Quantity:
2
11.3.
3680F–DFLASH–4/10
Deep Power-Down
During normal operation, the device will be placed in the standby mode to consume less power as long as the
pin remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the
ability to place the device into an even lower power consumption state called the Deep Power-Down mode.
When the device is in the Deep Power-Down mode, all commands including the Read Status Register command
will be ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be
ignored, the mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is accomplished by simply asserting the
B9h, and then deasserting the
ignored. When the
time of t
The complete opcode must be clocked in before the
an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the
standby mode once the
power-cycle.
The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase
cycle is in progress. The Deep Power-Down command must be reissued after the internally self-timed operation
has been completed in order for the device to enter the Deep Power-Down mode.
Figure 11-3. Deep Power-Down
SCK
SO
CS
I
SI
CC
EDPD
.
S tandby Mode C urrent
CS
MS B
HIG H-IMP E DANC E
1
0
Active C urrent
pin is deasserted, the device will enter the Deep Power-Down mode within the maximum
0
1
CS
1
2
OP C ODE
1
3
pin is deasserted. In addition, the device will default to the standby mode after a
1
4
CS
0
5
Deep P ower-Down Mode C urrent
0
6
pin. Any additional data clocked into the device after the opcode will be
1
7
t
E DP D
CS
pin is deasserted, and the
Atmel AT25DF641
CS
CS
pin, clocking in the opcode of
pin must be deasserted on
CS
43

Related parts for AT25DF641-S3H-B