VS-ST180C20C0 Vishay Semiconductors, VS-ST180C20C0 Datasheet - Page 3

• Manufacturer Part Number: VS-ST180C20C0
• Description: SCR Modules 2000 Volt 350 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST180C20C0

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 660 A
• Non Repetitive On-state Current: 5000 A
• Breakover Current Ibo Max: 5230 A
• Rated Repetitive Off-state Voltage Vdrm: 2 kV
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• On-state Voltage: 1.96 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 350 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Note
• The table above shows the increment of thermal resistance R
Document Number: 94396
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
CONDUCTION
SINUSOIDAL
For technical questions, contact: [e-mail]
(Hockey PUK Version), 350 A
SYMBOL
SYMBOL
R
R
P
+ V
- V
P
V
T
V
thC-hs
Phase Control Thyristors
I
DOUBLE SIDE
G(AV)
I
I
thJ-hs
T
GM
GD
GT
GM
Stg
GD
GT
GM
J
GM
0.015
0.019
0.024
0.035
0.060
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
thJC
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
J
J
J
J
when devices operate at different conduction angles than DC
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
RECTANGULAR
TEST CONDITIONS
TEST CONDITIONS
CONDUCTION
p
p
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
applied
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
DRM
Vishay High Power Products
0.011
0.019
0.026
0.037
0.061
anode to cathode
ST180CPbF Series
TEST CONDITIONS
T
J
= T
J
maximum
TYP.
180
TO-200AB (A-PUK)
2.9
1.8
1.2
- 40 to 125
- 40 to 150
90
40
VALUES
VALUES
0.033
0.017
(500)
4900
0.25
0.17
0.08
2.0
3.0
5.0
10
20
10
50
www.vishay.com
MAX.
150
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
N
A
V
V
V
g
3