AT28HC256-90DM/883 Atmel, AT28HC256-90DM/883 Datasheet - Page 5

• Manufacturer Part Number: AT28HC256-90DM/883
• Description: IC EEPROM 256KBIT 90NS 28CDIP
• Manufacturer: Atmel

Specifications of AT28HC256-90DM/883

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 256K (32K x 8)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 28-CDIP (0.600", 15.24mm)
• Density: 256Kb
• Interface Type: Parallel
• Organization: 32Kx8
• Access Time (max): 90ns
• Write Protection: Yes
• Data Retention: 10Year
• Operating Supply Voltage (typ): 5V
• Package Type: CDIP
• Operating Temp Range: -55C to 125C
• Supply Current: 80mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 28
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: AT28HC256-90DM883

5. DC and AC Operating Range
6. Operating Modes
Notes:
7. Absolute Maximum Ratings*
8. DC Characteristics
0007N–PEEPR–9/09
Operating
Temperature (Case)
V
Mode
Read
Write
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
Chip Erase
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
Symbol
I
I
I
I
I
V
V
V
V
LI
LO
SB1
SB2
CC
CC
IL
IH
OL
OH
Power Supply
(2)
1. X can be V
2. Refer to AC programming waveforms.
3. V
H
Parameter
Input Load Current
Output Leakage Current
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
= 12.0V ± 0.5V.
CC
CC
CC
Active Current
Standby Current TTL
Standby Current CMOS
IL
or V
IH
.
Ind.
Mil.
Condition
V
V
CE = 2.0V to V
CE = V
f = 5 MHz; I
I
I
OL
OH
IN
I/O
= 6.0 mA
= -4 mA
= 0V to V
= 0V to V
AT28HC256-70
-40°C - 85°C
CC
CC
CE
V
V
V
V
5V ± 10%
X
X
X
IH
+ 0.6V
IL
IL
IL
- 0.3V to V
OUT
CC
CC
CC
= 0 mA
+ 1V
CC
*NOTICE:
AT28HC256-90, -12
AT28HC256-70
AT28HC256-90, -12
V
X
OE
V
V
V
V
X
H
(1)
IH
IH
IL
IL
(3)
AT28HC256-90
-55°C - 125°C
-40°C - 85°C
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
5V ± 10%
Min
2.0
2.4
WE
V
V
V
V
X
X
X
IH
IL
IH
IL
AT28HC256
AT28HC256-12
Max
0.45
300
-55°C - 125°C
0.8
10
10
60
80
-40°C - 85°C
3
5V ± 10%
High Z
High Z
High Z
D
D
I/O
OUT
IN
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
5