TN2540N3-P002-G Supertex, TN2540N3-P002-G Datasheet - Page 4
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TN2540N3-P002-G
Manufacturer Part Number
TN2540N3-P002-G
Description
MOSFET 400V 12Ohm
Manufacturer
Supertex
Datasheet
1.TN2540N3-P003-G.pdf
(6 pages)
Specifications of TN2540N3-P002-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
175 mA
Resistance Drain-source Rds (on)
12 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
25 ns
Typical Performance Curves
200
150
100
1.1
1.0
0.9
1.5
1.2
0.9
0.6
0.3
50
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
C
RSS
BV
V
f = 1MHz
DS
DSS
2
Transfer Characteristics
10
0
= 25V
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
2 0
° (
(volts)
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
(cont.)
C
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
10
0
8
6
4
2
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
Tel: 408-222-8888
V
On-Resistance vs. Drain Current
(th)
and R
95pF
@ 1mA
0.4
0.4
0
V
DS
Q (nanocoulombs)
GS
G
I
Variation with Temperature
D
0.8
0.8
= 4.5V
(amperes)
T
V
R
j
50
GS
° (
DS(ON)
C)
V
●
1.2
DS
= 10V
1.2
260 pF
@ 10V, 0.5A
www.supertex.com
= 10V
V
100
DS
1.6
1.6
= 40V
2.0
150
2.0
2.5
2.0
1.5
1.0
0.5
0
TN2540