VS-180RKI100PBF Vishay Semiconductors, VS-180RKI100PBF Datasheet - Page 6
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VS-180RKI100PBF
Manufacturer Part Number
VS-180RKI100PBF
Description
SCRs 180 Amp 1000 Volt 285 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-181RKI40PBF.pdf
(8 pages)
Specifications of VS-180RKI100PBF
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
4000 A
Rated Repetitive Off-state Voltage Vdrm
1000 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.35 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Factory Pack Quantity
12
180RKI...PbF, 181RKI...PbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
94382_09
100
0.1
10
1
0.001
Rectangular gate pulse
(a) Recommended load line for
(b) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
r
≤ 0.5 μs, t
≤ 1 μs, t
V
Device code
GD
p
I
GD
≥ 6 μs
p
0.01
≥ 6 μs
For technical questions, contact:
1
4
2
3
5
18
LINKS TO RELATED DOCUMENTS
0.1
1
Instantaneous Gate Current (A)
Phase Control Thyristors
(a)
-
-
-
-
-
Fig. 9 - Gate Characteristics
(Stud Version), 180 A
(b)
1
2
Voltage code x 10 = V
I
Thyristor
T(AV)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
None = Standard production
PbF = Lead (Pb)-free
RKI
rated average output current (rounded/10)
3
1
indmodules@vishay.com
100
4
PbF
10
RRM
5
(1)
www.vishay.com/doc?95077
(see Voltage Ratings table)
(1) P
(2) P
(3) P
(4) P
Frequency limited by P
(2)
GM
GM
GM
GM
= 12 W, t
= 30 W, t
= 60 W, t
= 200 W, t
(3)
100
p
p
p
(4)
p
= 5 ms
= 2 ms
= 1 ms
= 300 μs
Document Number: 94382
G(AV)
1000
Revision: 03-Nov-09