VS-10RIA100 Vishay Semiconductors, VS-10RIA100 Datasheet - Page 6
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VS-10RIA100
Manufacturer Part Number
VS-10RIA100
Description
SCRs 1000 Volt 10 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-10RIA10.pdf
(9 pages)
Specifications of VS-10RIA100
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
240 A
Rated Repetitive Off-state Voltage Vdrm
1000 V
Off-state Leakage Current @ Vdrm Idrm
10 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
130 mA
Mounting Style
Stud
Package / Case
TO-48
Factory Pack Quantity
100
10RIA Series
Vishay Semiconductors
www.vishay.com
6
100
0.1
0.1
10
10
0.001
0.001
1
1
a) Recommended load line for
Rectangular gate pulse
b) Recommended load line for
VGD
Steady State Value
R
(DC Operation)
rated di/dt : 10V, 20ohms
tr<=1 µs, tp >= 6 µs
tr <=0.5 µs, tp >= 6 µs
<=30% rated di/dt : 10V, 65ohms
thJC
IGD
= 1.85 K/W
For technical questions, contact: ind-modules@vishay.com
Fig. 8 - Thermal Impedance Z
0.01
1000
100
Fig. 7 - Forward Voltage Drop Characteristics
10
1
0.01
0.5
Medium Power Thyristors
Instantaneous On-state Voltage (V)
(Stud Version), 10 A
T = 25°C
Fig. 9 - Gate Characteristics
1
Instantaneous Gate Current (A)
J
Square Wave Pulse Duration (s)
(b)
1.5
0.1
2
10R IA S eries
(a)
10RIA Series Frequency Limited by PG(AV)
0.1
2.5
thJC
T = 125°C
10RIA Series
J
1
3
Characteristics
3.5
(1) PGM = 16W , tp = 4ms
(2) PGM = 30W , tp = 2ms
(3) PGM = 60W , tp = 1ms
(4) PGM = 60W , tp = 1ms
4
1
10
(1)
(2)
(3)
(4)
100
10
Document Number: 93689
Revision: 06-Jun-08