TISP8250DR-S Bourns, TISP8250DR-S Datasheet - Page 3

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TISP8250DR-S

Manufacturer Part Number
TISP8250DR-S
Description
SCRs PROTECTOR - GATED UNIDIRECTIONAL
Manufacturer
Bourns
Datasheet

Specifications of TISP8250DR-S

Breakover Current Ibo Max
5 A
Rated Repetitive Off-state Voltage Vdrm
250 V
Off-state Leakage Current @ Vdrm Idrm
5 uA
Holding Current (ih Max)
180 mA
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Breakover Voltage Vbo
340 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
100 pF
Factory Pack Quantity
2500
TISP8250D Overvoltage and Overcurrent Protector
Parameter Measurement Information
+i
Quadrant I
Anode Positive
Switching Characteristic
V
(BO)
I
H
I
(BO)
I
I
D
DRM
-v
+v
V
V
D
DRM
Quadrant III
PM8XAAA
Anode Negative
-i
Reverse Characteristic
Figure 1. Voltage-Current Characteristic for A and K Terminals
All Measurements are Referenced to the K Terminal
Avalanche
A
diode
TISP-
V
< 250 V
(BR)
8250D
G
K
AI8XACAa
Figure 2. Overvoltage Protection Circuit
JULY 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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