LND150N3-P013 Supertex, LND150N3-P013 Datasheet - Page 4
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LND150N3-P013
Manufacturer Part Number
LND150N3-P013
Description
MOSFET 500V 1KOhm
Manufacturer
Supertex
Datasheet
1.LND150K1-G.pdf
(7 pages)
Specifications of LND150N3-P013
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 mA
Resistance Drain-source Rds (on)
1 kOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
450 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.74 W
Rise Time
450 ns
Factory Pack Quantity
2000
Typical Turn-off Delay Time
100 ns
Typical Performance Curves
1.1
1.0
0.9
10
10
5
0
5
0
-50
0
Capacitance vs. Drain-to-Source Voltage
V
V
GS
DS
V
-1
= -10V
BV
GS
= 400V
= -5.0V
DSS
Transfer Characteristics
10
0
Variation with Temperature
0
V
V
T
DS
GS
j
(
50
20
1
O
(V)
(V)
C)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
100
30
(cont.)
C
C
C
ISS
OSS
RSS
3
150
40
4
1.8
1.6
1.4
1.2
1.0
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
-5
5
0
-50
10
0
V
●
GS(OFF)
125°C
Gate Drive Dynamic Characteristics
Tel: 408-222-8888
and R
100
V
0
DS
25°C
Q
= 20V
8.7pF
0.1
DS
C
(nanocoulombs)
I
Variation with Temperature
R
D
vs R
SOURCE
T
R
j
1K
50
(
DS(ON)
O
SOURCE
C)
●
(Ω)
40V
V
@ I
GS(OFF)
www.supertex.com
0.2
D
= 1.0mA
R
@ 100nA
10K
100
SOURCE
I
LND1
↓
D
60V
100K
150
0.3
2.0
1.6
1.2
0.8
0.4
LND150