VP0109N3-P002 Supertex, VP0109N3-P002 Datasheet - Page 4
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VP0109N3-P002
Manufacturer Part Number
VP0109N3-P002
Description
MOSFET 90V 8Ohm
Manufacturer
Supertex
Datasheet
1.VP0104N3-P014-G.pdf
(5 pages)
Specifications of VP0109N3-P002
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 90 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.25 A
Resistance Drain-source Rds (on)
8 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
8 ns
Typical Performance Curves
1.10
1.06
1.02
0.98
0.94
0.90
-1.0
-0.8
-0.6
-0.4
-0.2
100
75
50
25
Capacitance vs. Drain-to-Source Voltage
0
0
-50
0
Supertex inc.
0
f = 1MHz
BV
V
DSS
DS
-2
Transfer Characteristics
= -25V
Variation with Temperature
-10
0
-4
V
V
GS
DS
T
T
j
-20
A
(volts)
(volts)
50
(
O
= 25
T
C)
A
-6
= -55
O
C
1235 Bordeaux Drive, Sunnyvale, CA 94089
O
T
-30
100
C
A
= 125
-8
C
C
C
(cont.)
RSS
OSS
ISS
O
C
-10
-40
150
4
-1.6
-1.4
-1.2
-1.0
-0.8
-10
0.6
50
40
30
20
10
-8
-6
-4
-2
0
0
-50
V
0
0
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Tel: 408-222-8888
and R
45pf
-0.3
0.2
V
GS
DS
0
= -5.0V
Q
Variation with Temperature
R
G
R
DS(ON)
V
70pf
-0.6
(nanocoulombs)
DS(ON)
0.4
DS
I
D
T
= -10V
(amperes)
@ -5V, -0.1A
j
(
@ 10V, -0.5A
50
O
V
C)
V
70pf
-0.9
GS
(th)
0.6
www.supertex.com
= -10V
@ -1.0mA
V
DS
100
= -40V
-1.2
0.8
-1.5
150
1.0
VP0104
-1.6
-1.4
-1.2
-1.0
-0.8