SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet - Page 5

• Manufacturer Part Number: SI1539DL-T1
• Description: MOSFET 30 0.63/0.45
• Manufacturer: Vishay/Siliconix

Specifications of SI1539DL-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.63 A, 0.45 A
• Resistance Drain-source Rds (on): 0.48 Ohms, 0.94 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 8 ns at N Channel, 8 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Rise Time: 8 ns at N Channel, 8 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns at N Channel, 5 ns at P Channel

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.0
0.01
0.1
2
1
10
V
GS
-4
0.02
0.05
0.2
Duty Cycle = 0.5
0.1
0.5
On-Resistance vs. Drain Current
= 4.5 V
0.2
Single Pulse
V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
0.4
2 V
1.5
10
V
For more information please contact:
-3
GS
0.6
Normalized Thermal Transient Impedance, Junction-to-Foot
= 10 V thru 5 V
2.0
V
GS
4 V
3 V
0.8
= 10 V
This document is subject to change without notice.
2.5
1.0
3.0
Square Wave Pulse Duration (s)
10
-2
[e-mail]
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
10
0
-1
0
0
C
C
rss
oss
1
4
V
V
Transfer Characteristics
DS
GS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
2
8
1
C
iss
12
3
Vishay Siliconix
T
www.vishay.com/doc?91000
C
25 °C
= - 55 °C
Si1539DL
16
4
www.vishay.com
125 °C
1
0
20
5
5