TN0610N3-P003 Supertex, TN0610N3-P003 Datasheet - Page 4
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TN0610N3-P003
Manufacturer Part Number
TN0610N3-P003
Description
MOSFET 100V 1.5Ohm
Manufacturer
Supertex
Datasheet
1.TN0606N3-P002-G.pdf
(5 pages)
Specifications of TN0610N3-P003
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.5 A
Resistance Drain-source Rds (on)
1.5 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
16 ns
Typical Performance Curves
200
150
100
1.1
1.0
0.9
50
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
BV
DS
DSS
2
= 25V
Transfer Characteristics
10
0
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
(
(volts)
O
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
100
30
(cont.)
8
C
C
RSS
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
10
5
4
3
2
1
0
8
6
4
2
0
-50
0
0
●
V
(th)
Gate Drive Dynamic Characteristics
Tel: 408-222-8888
On-Resistance vs. Drain Current
and R
V
0.5
2
(th)
0
V
95 pF
@ 1mA
DS
Q (nanocoulombs)
GS
G
I
D
Variation with Temperature
= 5V
1.0
(amperes)
4
V
T
DS
j
50
(
O
= 10V
C)
●
R
DS
1.5
6
www.supertex.com
172 pF
@ 10V, 0.75A
V
100
V
GS
DS
2.0
8
= 10V
= 40V
150
2.5
10
2.0
1.6
1.2
0.8
0.4
0
TN0606