IS61LV12816L-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10TL-TR Datasheet - Page 7

• Manufacturer Part Number: IS61LV12816L-10TL-TR
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12816L-10TL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12816L
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. F
10/27/05
READ CYCLE NO. 2
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
ADDRESS
D
LB, UB
OUT
D
OUT
OE
CE
HIGH-Z
t
LZCE
PREVIOUS DATA VALID
(1,2)
(1,3)
t
LZB
(Address Controlled) (CE = OE = V
t
AA
t
DOE
t
t
t
LZOE
ACE
BA
t
OHA
t
RC
IL
1-800-379-4774
.
t
AA
t
RC
DATA VALID
IL
, UB or LB = V
t
DATA VALID
HZCE
IL
)
t
OHA
t
t
t
OHA
HZB
HZOE
READ1.eps
UB_CEDR2.eps
ISSI
®
7