NCL30051LEDGEVB ON Semiconductor, NCL30051LEDGEVB Datasheet - Page 8

• Manufacturer Part Number: NCL30051LEDGEVB
• Description: Power Management IC Development Tools 90-265VAC 60W ISO CC EVB
• Manufacturer: ON Semiconductor
• Type: Power Factor Correctionr

Specifications of NCL30051LEDGEVB

• Rohs: yes
• Product: Evaluation Boards
• Tool Is For Evaluation Of: NCL30051
• Input Voltage: 90 VAC to 265 VAC
• Output Voltage: 35 V to 50 V
• Output Current: 1.5 A

Part Description: Resonant Half−bridge Transformer − 60 W, 35 kHz (Rev 3)
Schematic ID: T1
Core Type: PQ20/20, Ferroxcube 3C95 or equivalent material
Primary Inductance: 6 mH minimum
Leakage Inductance: 90 − 100 uH nominal (resonant half−bridge, leakage inductance is Lr)
Hipot: 3000 volts from Primary to Secondary (1 minute)
Bobbin Type: PQ20/20 14 pin PC mount bobbin
Windings (in order):
Note: The critical parameter is to achieve a leakage inductance of 90 − 100 uH with a min
Primary winding (2 − 5)
Secondary winding (7,11 − 10,14)
Vacuum varnish assembly.
Primary
2
5
Winding # / type
primary inductance of 6 mH. The overall turns can be increased or decreased to
achieve this as long as the turns ratio remains 5:1.
Schematic
Figure 4. Resonant Half−Bridge Transformer Design (T1)
11
14
10
7
Secondary
http://onsemi.com
96 turns of #28 HN magnet wire over 3 layers,
32 turns per layer approx. Self−leads to pins.
Insulate with Mylar tape sufficient for 3 kV Hipot
to next winding.
19 turns of 2 X #26 magnet wire bifilar wound over
two layers. Self−leads to pins per schematic below.
Final insulate with Mylar tape.
8
Turns / Material / Gauge / Insulation Data
14
11
10
Lead Breakout / Pinout
7
Bottom View
1
2
3
4
5
6