TF252TH-4-TL-H ON Semiconductor, TF252TH-4-TL-H Datasheet - Page 3

• Manufacturer Part Number: TF252TH-4-TL-H
• Description: JFET JunctionFET 20V 1mA Nch VTFP
• Manufacturer: ON Semiconductor

Specifications of TF252TH-4-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain Current (idss At Vgs=0): 140 uA to 350 uA
• Drain Source Voltage Vds: 2 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 1 mA
• Mounting Style: SMD/SMT
• Package / Case: VTFP-3
• Gate-source Cutoff Voltage: - 0.4 V
• Maximum Operating Temperature: + 150 C
• Power Dissipation: 100 mW

300
250
200
150
100
400
300
200
100
1.0
350
250
150
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
50
50
7
5
3
2
0
0
--0.6
100
5
0
V DS =2V
V GS =0V
f=1kHz
Zero-Gate Voltage Drain Current, I DSS -- μA
7
--0.5
150
1.0
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
0.5
--0.4
200
2
|
Ciss -- V DS
y
I D -- V DS
I D -- V GS
fs | -- I DSS
3
--0.3
250
1.0
5
7
--0.2
300
10
1.5
--0.1
350
V DS =2V
V GS =0V
f=1MHz
--0.30V
IT12440
IT12442
IT12444
2
400
2.0
0
3
IT12446
TF252TH
--0.60
--0.55
--0.50
--0.45
--0.40
--0.35
--0.30
--0.25
--0.20
350
300
250
200
150
100
400
350
300
250
200
150
100
1.0
50
50
--0.6
3
2
7
5
3
0
0
100
0
5
Zero-Gate Voltage Drain Current, I DSS -- μA
7
--0.5
150
1.0
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
1
Gate-to-Source Voltage, V GS -- V
V GS (off) -- I DSS
--0.4
200
2
Crss -- V DS
I D -- V DS
I D -- V GS
2
3
--0.3
250
5
3
--0.2
7
300
10
4
--0.1
350
No. A0842-3/7
V GS =0V
f=1MHz
V DS =2V
V DS =2V
I D =1μA
--0.4V
IT12441
IT12443
IT12445
2
400
5
0
3
IT12447