BTA316X-600E/DG,12 NXP Semiconductors, BTA316X-600E/DG,12 Datasheet - Page 5

• Manufacturer Part Number: BTA316X-600E/DG,12
• Description: Triacs 600 V 16 A TO220F
• Manufacturer: NXP Semiconductors

Specifications of BTA316X-600E/DG,12

• Rohs: yes
• On-state Rms Current (it Rms): 16 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 15 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 4.
6. Isolation characteristics
Table 5.
T
BTA316X_SER_B_C_E_1
Product data sheet
Symbol
R
R
Symbol
V
C
h
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
isol(RMS)
th(j-h)
th(j-a)
isol
= 25 C unless otherwise specified.
Z
(K/W)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
th(j-h)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Isolation limiting values and characteristics
Parameter
RMS isolation voltage from all three terminals to
isolation capacitance
Parameter
thermal resistance from junction to
heatsink
thermal resistance from junction to
ambient
10
4
Conditions
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
from pin 2 to external heatsink;
f = 1 MHz
10
65 %; clean and dust free
3
Rev. 01 — 11 April 2007
Conditions
full or half cycle without
heatsink compound; see
Figure 6
full or half cycle with
heatsink compound; see
Figure 6
in free air
BTA316X series B, C and E
10
2
(1)
(2)
16 A Three-quadrant triacs high commutation
(3)
(4)
10
Min
-
-
1
Min
-
-
-
Typ
-
10
Typ
-
-
55
1
P
t
t
p
Max
2500
-
© NXP B.V. 2007. All rights reserved.
p
Max
5.5
4.0
-
(s)
003aab672
t
10
Unit
K/W
K/W
K/W
Unit
V
pF
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