IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 34

• Manufacturer Part Number: IS43R16160B-5TL-TR
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

34
IS43R83200B, IS46R83200B
IS43R16160B, IS46R16160B
[Write interrupted by Read]
[Write interrupted by Write]
access is allowed. Internal WRITE to READ command interval(tWTR) is minimum 1 CLK. The
input data on DQ at the interrupting READ cycle is "don't care". tWTR is referenced from the first
positive edge after the last data input.
Burst write operation can be interrupted by write of any bank. Random column access is allowed.
WRITE to WRITE interval is minimum 1 CLK.
Burst write operation can be interrupted by read of the same or the other bank. Random column
Command
A0-9,11,12
Command
A0-9,11,12
BA0,1
BA0,1
/CLK
DQS
CLK
/CLK
A10
CLK
DQ
A10
DM
DQ
QS
WRITE
WRITE
Yi
00
Yi
00
0
0
WRITE
Dai0
Yj
00
Dai0 Dai1
0
Dai1
Daj0
Write Interrupted by Read (BL=8, CL=2.5)
Write Interrupted by Write (BL=8)
tWTR
Daj1
WRITE
READ
Daj2
Yk
10
Yj
00
0
0
Daj3
Dak0
Dak1
Dak2
Dak3
WRITE
Qaj0
Dak4
Yl
00
0
Qaj1 Qaj2 Qaj3
Dak5
Dal0
Dal1
Qaj4 Qaj5 Qaj6
Dal2 Dal3
Dal4
Integrated Silicon Solution, Inc.
Dal5 Dal6
Qaj7
Dal7
03/04/2010
Rev. D