2SB1203T-TL-E ON Semiconductor, 2SB1203T-TL-E Datasheet - Page 5

• Manufacturer Part Number: 2SB1203T-TL-E
• Description: Transistors Bipolar - BJT BIP PNP 5A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SB1203T-TL-E

• Rohs: yes
• Transistor Polarity: NPN/PNP
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Dc Collector/base Gain Hfe Min: 70 mA
• Mounting Style: Through Hole
• Package / Case: TO-252
• Continuous Collector Current: 5 A
• Maximum Power Dissipation: 1 W

0.01
1.0
0.1
10
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
I C
I CP
Tc=25 ° C
Single pulse
For PNP, the minus sign is omitted.
2
3
Collector-to-Emitter Voltage, V CE -- V
5
7
1.0
2
A S O
3
5
7
2SB1203 / 2SD1803
10
2
3
2SB1203/2SD1803
ITR09196
5
7
100
24
20
16
12
8
4
0
0
1
20
Ambient Temperature, Ta -- ° C
40
60
P C -- Ta
80
100
2SB1203 / 2SD1803
120
No.2085-5/10
140
ITR09197
160