2SB1203S-E ON Semiconductor, 2SB1203S-E Datasheet - Page 5
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2SB1203S-E
Manufacturer Part Number
2SB1203S-E
Description
Transistors Bipolar - BJT BIP PNP 5A 50V
Manufacturer
ON Semiconductor
Datasheet
1.2SD1803S-H.pdf
(10 pages)
Specifications of 2SB1203S-E
Rohs
yes
Transistor Polarity
NPN/PNP
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
- 6 V
Dc Collector/base Gain Hfe Min
70 mA
Mounting Style
Through Hole
Package / Case
TO-251
Continuous Collector Current
5 A
Maximum Power Dissipation
1 W
0.01
1.0
0.1
10
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
I C
I CP
Tc=25 ° C
Single pulse
For PNP, the minus sign is omitted.
2
3
Collector-to-Emitter Voltage, V CE -- V
5
7
1.0
2
A S O
3
5
7
2SB1203 / 2SD1803
10
2
3
2SB1203/2SD1803
ITR09196
5
7
100
24
20
16
12
8
4
0
0
1
20
Ambient Temperature, Ta -- ° C
40
60
P C -- Ta
80
100
2SB1203 / 2SD1803
120
No.2085-5/10
140
ITR09197
160