PCP1103-P-TD-H ON Semiconductor, PCP1103-P-TD-H Datasheet - Page 3

• Manufacturer Part Number: PCP1103-P-TD-H
• Description: Transistors Bipolar - BJT
• Manufacturer: ON Semiconductor

Specifications of PCP1103-P-TD-H

• Transistor Polarity: PNP
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 5 V
• Dc Collector/base Gain Hfe Min: 200 mA
• Continuous Collector Current: - 1.5 A
• Maximum Power Dissipation: 1.3 W

--0.01
--0.01
--1.0
--0.1
--1.0
--0.1
100
--10
100
10
--0.01
--0.01
--0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
Ta=25° C
Single pulse
When mounted on ceramic substrate (450mm
I CP = --5A
I C = --1.5A
2
2
2
2
3
Collector-to-Emitter Voltage, V CE -- V
3
Collector-to-Base Voltage, V CB -- V
5
3
3
7
--0.1
5 7
Collector Current, I C -- A
5
Collector Current, I C -- A
5
V CE (sat) -- I C
7
7
2
Cob -- V CB
1.0
--0.1
--0.1
h FE -- I C
3
A S O
5
2
7
--1.0
2
2
3
3
3
2
5 7 10
3
5
5
5
7
7
2
×0.8mm)
7
--1.0
--1.0
--10
V CE = --2V
I C / I B =50
f=1MHz
2
<10μs
2 3
IT14108
IT01681
IT14110
IT14112
3
2
2
PCP1103
3
5
5
3
--0.01
1000
--0.1
--1.0
100
1.6
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
--0.01
--0.01
--0.01
3
2
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
3
2
7
5
3
2
0
0
20
2
2
2
3
3
3
Ambient Temperature, Ta -- °C
40
Collector Current, I C -- A
Collector Current, I C -- A
5
Collector Current, I C -- A
5
5
V CE (sat) -- I C
V BE (sat) -- I C
7
7
60
7
--0.1
--0.1
P C -- Ta
f T -- I C
--0.1
80
2
2
2
3
3
100
3
5
5
120
5
7
7
No. A1346-3/4
V CE = --10V
--1.0
--1.0
I C / I B =50
I C / I B =20
7
--1.0
140
IT01679
IT14109
IT14113
IT14111
2
2
160
3
2
3