SBC807-16LT3G ON Semiconductor, SBC807-16LT3G Datasheet - Page 4

• Manufacturer Part Number: SBC807-16LT3G
• Description: Transistors Bipolar - BJT SS GP XSTR SPCL TR
• Manufacturer: ON Semiconductor

Specifications of SBC807-16LT3G

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V, 40 at 500 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Dc Current Gain Hfe Max: 100 at 100 mA at 1 V
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 55 C

+1.0
-1.0
-2.0
0
-1.0
q
VB
for V
Figure 6. Temperature Coefficients
BE
q
VC
I
C
for V
, COLLECTOR CURRENT (mA)
-10
CE(sat)
-1.0
-0.8
-0.6
-0.4
-0.2
-0.01
0
TYPICAL CHARACTERISTICS − BC807−16LT1
I
C
-100
= -10 mA
Figure 5. Saturation Region
-0.1
I
C
I
http://onsemi.com
B
= -100 mA
, BASE CURRENT (mA)
-1000
-1.0
4
I
C
= -300 mA
100
1.0
10
-0.1
-10
I
-500 mA
T
C
J
=
= 25°C
V
Figure 7. Capacitances
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-100
C
ib
-10
C
ob
-100