DMG201020R Panasonic Electronic Components, DMG201020R Datasheet - Page 2

• Manufacturer Part Number: DMG201020R
• Description: Transistors Bipolar - BJT Composite Transistor
• Manufacturer: Panasonic Electronic Components

Specifications of DMG201020R

• Rohs: yes
• Transistor Polarity: NPN/PNP
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Dc Collector/base Gain Hfe Min: 120
• Package / Case: Mini5-G3-B
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 300 mW

DMG20102
 Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
 Tr1
 Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Common characteristics chart
400
300
200
100
0
0
Ambient temperature T
Parameter
Parameter
40
DMG20102_PT-Ta
80
P
T
 T
120
a
a
160
a
= 25°C±3°C
( °C )
200
Symbol
Symbol
V
V
V
V
V
V
V
V
V
I
I
h
h
h
h
CE(sat)
C
CE(sat)
BE(sat)
C
CBO
CBO
CBO
f
CBO
f
CEO
EBO
FE1
FE2
CEO
EBO
FE1
FE2
T
T
ob
ob
I
I
I
V
V
V
I
V
V
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
C
E
C
C
CB
CE
CE
CE
CB
CB
CE
CE
CE
CB
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 300 mA, I
= –10 µA, I
= –2 mA, I
= –10 µA, I
= –300 mA, I
= –300 mA, I
= 10 V, I
= 10 V, I
= 10 V, I
= –10 V, I
= –10 V, I
= –10 V, I
= 20 V, I
= 10 V, I
= –20 V, I
= –10 V, I
Ver. CED
B
C
E
C
C
C
E
E
B
= 0
E
C
Conditions
Conditions
C
C
C
= 0
= 0
E
E
B
= 0
= 150 mA
= 500 mA
= 50 mA
= 0, f = 1 MHz
= 0
= 0
= 0
B
B
= 0
= –150 mA
= –500 mA
= –50 mA
= 0, f = 1 MHz
= 30 mA
= –30 mA
= –30 mA
Min
Min
120
–60
–50
120
60
50
40
–5
40
5
– 0.2
– 0.9
Typ
Typ
160
130
0.1
4.8
7.3
Max
Max
– 0.1
– 0.6
–1.5
340
340
0.1
0.6
15
15
MHz
MHz
Unit
Unit
µA
µA
pF
pF


V
V
V
V
V
V
V
V
V
2