BTA202X-800E/L01,1 NXP Semiconductors, BTA202X-800E/L01,1 Datasheet - Page 2

• Manufacturer Part Number: BTA202X-800E/L01,1
• Description: Triacs
• Manufacturer: NXP Semiconductors

Specifications of BTA202X-800E/L01,1

• Rohs: yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BTA202X-800E
Product data sheet
Symbol
Pin
Type number
Static characteristics
I
Dynamic characteristics
dV
dI
1
2
3
mb
BTA202X-800E
BTA202X-800E/L01
GT
com
D
/dt
/dt
Symbol Description
T1
T2
G
n.c.
Pinning information
Ordering information
Parameter
gate trigger current
rate of rise of off-state
voltage
rate of change of
commutating current
main terminal 1
main terminal 2
gate
mounting base; isolated
Package
Name
TO-220F
TO-220F
Conditions
Description
All information provided in this document is subject to legal disclaimers.
V
T
V
T
V
T
V
R
exponential waveform
V
dV
condition); gate open circuit
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
j
j
j
D
D
D
DM
D
GT1
= 25 °C;
= 25 °C;
= 25 °C;
com
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; T
= 536 V; T
= 220 Ω; (V
/dt = 20 V/µs; (snubberless
Simplified outline
Fig. 7
Fig. 7
Fig. 7
T
T
T
11 October 2012
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
TO-220F (SOT186A)
= 125 °C; I
j
= 125 °C;
DM
= 67% of V
1
mb
2
T(RMS)
3
DRM
= 2 A;
);
Graphic symbol
Min
0.5
0.5
0.5
-
2
BTA202X-800E
T2
sym051
Typ
-
-
-
500
-
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
T1
G
Max
Version
10
10
10
-
-
SOT186A
SOT186A
Unit
mA
mA
mA
V/µs
A/ms
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